Infineon IPN N-Channel MOSFET, 9 A, 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- RS Stock No.:
- 217-2542
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
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Units | Per Unit | Per Reel* | Saving |
|---|---|---|---|
| 3000 - 3000 | MYR1.824 | MYR5,472.00 | - |
| 6000 - 9000 | MYR1.784 | MYR5,352.00 | MYR240.00 |
| 12000 + | MYR1.751 | MYR5,253.00 | MYR876.00 |
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- RS Stock No.:
- 217-2542
- Mfr. Part No.:
- IPN60R360P7SATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 111W | |
| Maximum Operating Temperature | 150°C | |
| Width | 8.8mm | |
| Length | 8.8mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 111W | ||
Maximum Operating Temperature 150°C | ||
Width 8.8mm | ||
Length 8.8mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon IPN Series MOSFET, 600V Maximum Drain Source Voltage, 111W Maximum Power Dissipation - IPN60R360P7SATMA1
Features and Benefits:
• 9 A continuous drain current supports moderate power loads
• 360 mΩ Rds(on) minimises conduction losses at rated conditions
• 111 W power dissipation allows sustained thermal handling
• 36 nC typical gate charge facilitates predictable switching behaviour
Applications
• Ideal for DC-DC converter output stages
• Used with power supplies requiring surface-mount components
• Can be used for motor driver switches in control circuits
• Suitable for line‑level power management in industrial equipment
What gate voltage limits must be observed during operation?
What thermal range can the device withstand in service?
How many electrical connections does it provide for PCB mounting?
What is the typical forward drop when conducting in the forward diode path?
Related links
- Infineon IPN N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
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- Infineon IPN N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
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