Infineon CoolMOS Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-263 IPB65R095C7ATMA2
- RS Stock No.:
- 217-2506
- Mfr. Part No.:
- IPB65R095C7ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR124.83
FREE delivery for orders over RM 500.00
In Stock
- 225 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 245 | MYR24.966 | MYR124.83 |
| 250 - 495 | MYR22.89 | MYR114.45 |
| 500 + | MYR21.126 | MYR105.63 |
*price indicative
- RS Stock No.:
- 217-2506
- Mfr. Part No.:
- IPB65R095C7ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 129W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 9.45 mm | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 129W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 9.45 mm | ||
Length 10.31mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines thee experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits off a switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOMRDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on)/package
Easy to use/drive
Pb-free plating, halogen free mold compound
Qualified for industrial grade applications according to JEDEC(J-STD20 andJESD22)
Related links
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R110CFDAATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R099P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB65R190C7ATMA2
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 IPB60R040C7ATMA1