Infineon 800V CoolMOS P7 N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin TO-252 IPD80R2K4P7ATMA1
- RS Stock No.:
- 215-2516
- Mfr. Part No.:
- IPD80R2K4P7ATMA1
- Manufacturer:
- Infineon
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Add 640 more to save MYR192.00
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MYR72.18
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- 2,140 unit(s) ready to ship from another location
Units | Per Unit | Per Pack* | Saving |
|---|---|---|---|
| 20 - 620 | MYR3.609 | MYR72.18 | - |
| 640 - 1240 | MYR3.309 | MYR66.18 | MYR192.00 |
| 1260 + | MYR3.054 | MYR61.08 | MYR699.30 |
*price indicative
- RS Stock No.:
- 215-2516
- Mfr. Part No.:
- IPD80R2K4P7ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 22W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series 800V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 22W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
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