Infineon HEXFET Type N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- RS Stock No.:
- 214-4464
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 15 units)*
MYR98.475
FREE delivery for orders over RM 500.00
In Stock
- 1,185 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 15 - 195 | MYR6.565 | MYR98.48 |
| 210 - 390 | MYR6.017 | MYR90.26 |
| 405 + | MYR5.557 | MYR83.36 |
*price indicative
- RS Stock No.:
- 214-4464
- Mfr. Part No.:
- IRFZ46ZSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 82W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 82W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
Related links
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
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- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263