Infineon DirectFET N-Channel MOSFET, 25 A, 100 V, 3-Pin DirectFET IRF6645TRPBF
- RS Stock No.:
- 214-4455
- Mfr. Part No.:
- IRF6645TRPBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
MYR55.70
FREE delivery for orders over RM 150.00
In Stock
- Plus 3,320 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 1190 | MYR5.57 | MYR55.70 |
| 1200 - 2390 | MYR5.103 | MYR51.03 |
| 2400 + | MYR4.715 | MYR47.15 |
*price indicative
- RS Stock No.:
- 214-4455
- Mfr. Part No.:
- IRF6645TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DirectFET | |
| Series | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DirectFET | ||
Series DirectFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
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