Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
- RS Stock No.:
- 214-4392
- Mfr. Part No.:
- IPD70R360P7SAUMA1
- Manufacturer:
- Infineon
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MYR72.02
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 620 | MYR3.601 | MYR72.02 |
| 640 - 1240 | MYR3.391 | MYR67.82 |
| 1260 + | MYR3.124 | MYR62.48 |
*price indicative
- RS Stock No.:
- 214-4392
- Mfr. Part No.:
- IPD70R360P7SAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 12.5A Continuous Drain Current - IPD70R360P7SAUMA1
This MOSFET is a high-voltage N-channel enhancement device designed for switch-mode power conversion and other power-handling roles. It is a surface-mount component intended for use where robust voltage blocking and switching capability are needed in compact assemblies. The device operates across a wide temperature range and supports typical gate-drive voltages for power electronics applications.
Features and Benefits:
• 700V blocking capability enables high-voltage designs
• 12.5A continuous drain current supports substantial load currents
• RDS(on) 360mΩ minimises conduction losses under load
• Power dissipation 59.5W allows sustained thermal handling
• Gate charge 16.4nC reduces switching energy losses
• VGS rating ±16V permits standard gate-drive margins
• 12.5A continuous drain current supports substantial load currents
• RDS(on) 360mΩ minimises conduction losses under load
• Power dissipation 59.5W allows sustained thermal handling
• Gate charge 16.4nC reduces switching energy losses
• VGS rating ±16V permits standard gate-drive margins
Applications
• Suitable for high-voltage SMPS primary switches
• Ideal for industrial power converter stages
• Used with flyback and forward topologies in supplies
• Can be used for power-factor-correction front ends
• Appropriate for high-voltage testing and lab setups
• Ideal for industrial power converter stages
• Used with flyback and forward topologies in supplies
• Can be used for power-factor-correction front ends
• Appropriate for high-voltage testing and lab setups
What thermal range can the device tolerate in operation?
It is specified to operate from -40°C up to 150°C, allowing use in demanding thermal environments.
What package should I expect for board layout considerations?
The part is supplied in a TO-252 surface-mount package with three pins for straightforward PCB footprint integration.
What is the forward conduction characteristic under switching?
The forward voltage is 0.9V which influences conduction-loss calculations during on-state operation.
How should gate-drive design account for switching behaviour?
Use the typical gate charge of 16.4nC to size driver current and switching timing for desired transition speeds.
Related links
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252