Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-252 IPD70R360P7SAUMA1
- RS Stock No.:
- 214-4392
- Mfr. Part No.:
- IPD70R360P7SAUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
MYR56.62
FREE delivery for orders over RM 500.00
In Stock
- 2,140 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 620 | MYR2.831 | MYR56.62 |
| 640 - 1240 | MYR2.666 | MYR53.32 |
| 1260 + | MYR2.456 | MYR49.12 |
*price indicative
- RS Stock No.:
- 214-4392
- Mfr. Part No.:
- IPD70R360P7SAUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 16.4nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 59.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.65mm | |
| Height | 2.35mm | |
| Standards/Approvals | No | |
| Width | 6.42 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 16.4nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 59.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.65mm | ||
Height 2.35mm | ||
Standards/Approvals No | ||
Width 6.42 mm | ||
Automotive Standard No | ||
The Infineon 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
Related links
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223 IPN70R360P7SATMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin IPAK IPSA70R360P7SAKMA1
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-252