STMicroelectronics N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 STD15N60DM6
- RS Stock No.:
- 210-8742
- Mfr. Part No.:
- STD15N60DM6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR61.75
FREE delivery for orders over RM 150.00
Temporarily out of stock
- Shipping from 15 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 620 | MYR12.35 | MYR61.75 |
| 625 - 1245 | MYR11.92 | MYR59.60 |
| 1250 + | MYR11.322 | MYR56.61 |
*price indicative
- RS Stock No.:
- 210-8742
- Mfr. Part No.:
- STD15N60DM6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 338mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Width | 6.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 338mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Width 6.2mm | ||
Automotive Standard No | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Related links
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD15N60DM6
- STMicroelectronics MDmesh M2 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD16N60M2
- Infineon 600V CoolMOS P7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- STMicroelectronics N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 STD80N340K6
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD13N60DM2
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD12N60DM6
- STMicroelectronics N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD9N60M6
- STMicroelectronics M6 N-Channel MOSFET 600 V, 3-Pin TO-252