Texas Instruments NexFET Type N-Channel MOSFET, 100 A, 16 V Enhancement, 8-Pin VSONP
- RS Stock No.:
- 208-8474
- Mfr. Part No.:
- CSD16403Q5A
- Manufacturer:
- Texas Instruments
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
MYR12,830.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 09 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | MYR5.132 | MYR12,830.00 |
| 5000 - 7500 | MYR5.019 | MYR12,547.50 |
| 10000 + | MYR4.927 | MYR12,317.50 |
*price indicative
- RS Stock No.:
- 208-8474
- Mfr. Part No.:
- CSD16403Q5A
- Manufacturer:
- Texas Instruments
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 16V | |
| Series | NexFET | |
| Package Type | VSONP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.8mm | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Width | 5.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 16V | ||
Series NexFET | ||
Package Type VSONP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 4.8mm | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Width 5.9 mm | ||
Automotive Standard No | ||
-
-
Related links
- Texas Instruments NexFET Type N-Channel MOSFET 16 V Enhancement, 8-Pin VSONP CSD16403Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin VSONP
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP CSD19531Q5A
- Texas Instruments NexFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin VSONP CSD19534Q5A