DiodesZetex DMP2067 Type P-Channel MOSFET, 4.2 A, 20 V Enhancement, 6-Pin TSOT DMP2067LVT-7
- RS Stock No.:
- 206-0108
- Mfr. Part No.:
- DMP2067LVT-7
- Manufacturer:
- DiodesZetex
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 206-0108
- Mfr. Part No.:
- DMP2067LVT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT | |
| Series | DMP2067 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 1.2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Forward Voltage Vf | -1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 1.8mm | |
| Width | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT | ||
Series DMP2067 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 1.2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Forward Voltage Vf -1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 1.8mm | ||
Width 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 8 V with 1.2 W thermal power dissipation.
Low on-resistance
Low input capacitance
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