Vishay Dual SiZ270DT 2 N-Channel MOSFET, 19.1 A, 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- RS Stock No.:
- 204-7263
- Mfr. Part No.:
- SIZ270DT-T1-GE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 204-7263
- Mfr. Part No.:
- SIZ270DT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 19.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiZ270DT | |
| Package Type | PowerPAIR 3 x 3S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0377Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 750μm | |
| Standards/Approvals | No | |
| Width | 3.3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 19.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiZ270DT | ||
Package Type PowerPAIR 3 x 3S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0377Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 750μm | ||
Standards/Approvals No | ||
Width 3.3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 100 V (D-S) MOSFETs is an integrated MOSFET half bridge power stage and has a optimized Qgs/Qgs ratio improves switching characteristics.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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