Vishay SiHG105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SIHG105N60EF-GE3

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Subtotal (1 pack of 5 units)*

MYR81.08

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Last RS stock
  • Final 470 unit(s), ready to ship from another location

Units
Per Unit
Per Pack*
5 - 120MYR16.216MYR81.08
125 - 245MYR15.404MYR77.02
250 +MYR14.634MYR73.17

*price indicative

Packaging Options:
RS Stock No.:
204-7209
Mfr. Part No.:
SIHG105N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Series

SiHG105N60EF

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

102mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

15.87mm

Height

20.7mm

Automotive Standard

No

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er)

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