STMicroelectronics SCT N-Channel MOSFET, 95 A, 650 V Depletion, 7-Pin H2PAK SCTH100N65G2-7AG
- RS Stock No.:
- 202-5481
- Mfr. Part No.:
- SCTH100N65G2-7AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-5481
- Mfr. Part No.:
- SCTH100N65G2-7AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -65°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 360W | |
| Forward Voltage Vf | 2.8V | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.25mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 4.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -65°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 360W | ||
Forward Voltage Vf 2.8V | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Maximum Operating Temperature 175°C | ||
Height 15.25mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 4.8mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCT N-Channel MOSFET 650 V Depletion, 7-Pin H2PAK
- STMicroelectronics SCT N-Channel MOSFET 1200 V Depletion, 7-Pin H2PAK
- STMicroelectronics SCT N-Channel MOSFET 1200 V Depletion, 7-Pin H2PAK SCTW100N65G2AG
- STMicroelectronics SCT N-Channel MOSFET Modules 1200 V Depletion, 7-Pin H2PAK-7 SCTH40N120G2V7AG
- STMicroelectronics SCT N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT027H65G3AG
- STMicroelectronics SCT N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3AG
- STMicroelectronics Sct N-Channel Power MOSFET 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- Vishay N-Channel MOSFET 20 V Depletion, 7-Pin PowerPAK SC-70W-6L SQA446CEJW-T1_GE3