STMicroelectronics SCT N-Channel MOSFET, 65 A, 1200 V Depletion, 3-Pin Hip-247
- RS Stock No.:
- 202-5478
- Mfr. Part No.:
- SCT50N120
- Manufacturer:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 202-5478
- Mfr. Part No.:
- SCT50N120
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.59Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 318W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Forward Voltage Vf | 3.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Height | 34.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.59Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 318W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Forward Voltage Vf 3.5V | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Height 34.95mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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