Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3
- RS Stock No.:
- 200-6794
- Mfr. Part No.:
- SiHP105N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 50 units)*
MYR975.60
FREE delivery for orders over RM 500.00
In Stock
- Plus 50 unit(s) shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 50 - 50 | MYR19.512 | MYR975.60 |
| 100 - 150 | MYR19.083 | MYR954.15 |
| 200 + | MYR18.732 | MYR936.60 |
*price indicative
- RS Stock No.:
- 200-6794
- Mfr. Part No.:
- SiHP105N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.52mm | |
| Width | 4.65mm | |
| Standards/Approvals | RoHS | |
| Height | 14.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.52mm | ||
Width 4.65mm | ||
Standards/Approvals RoHS | ||
Height 14.4mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3
This power MOSFET is a high-voltage N-channel enhancement device intended for power-switching roles in industrial and electronic systems. It is designed for through-hole mounting in applications that demand substantial blocking voltage, steady current capability and robust thermal margin, offering a practical solution for high-voltage circuitry.
Features and Benefits:
• 650V rating enables use in high-voltage switching systems
• 29A continuous drain current supports substantial load currents
• 88mΩ on-resistance reduces conduction losses
• 53nC typical gate charge allows predictable switching energy
• 208W power dissipation capacity improves thermal handling
• 150°C maximum operating temperature tolerates elevated junctions
• 29A continuous drain current supports substantial load currents
• 88mΩ on-resistance reduces conduction losses
• 53nC typical gate charge allows predictable switching energy
• 208W power dissipation capacity improves thermal handling
• 150°C maximum operating temperature tolerates elevated junctions
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used for audio power amplifiers requiring high Vds margin
• Can be used for inverter front-end switches in machinery
• Used with discrete-level gate drivers in automation systems
• Ideal for industrial motor drive switching stages
• Used for audio power amplifiers requiring high Vds margin
• Can be used for inverter front-end switches in machinery
• Used with discrete-level gate drivers in automation systems
What gate-drive limits should be observed for reliable operation?
The device tolerates gate-source voltages up to 30V
stay within this limit to avoid degrading gate insulation and ensure expected switching behaviour.
How should thermal management be approached on a through-hole layout?
Utilise a suitably rated heatsink attached to the TO-220AB package tab and ensure sufficient airflow to maintain junction temperatures below the 150°C maximum under expected dissipation.
What switching trade-offs arise from the typical gate charge value?
A 53nC gate charge balances switching speed and driver demand
drivers must supply sufficient Peak current to achieve the desired rise and fall times without excessive switching losses.
Can this component be mounted on legacy assemblies that require discrete components?
Yes, its through-hole format and three-pin configuration are compatible with traditional board designs and manual assembly processes.
Related links
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP125N60EF-GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3