Vishay SQJA78EP Type N-Channel MOSFET, 72 A, 80 V Enhancement, 8-Pin SO-8 SQJA78EP-T1_GE3
- RS Stock No.:
- 188-5157
- Mfr. Part No.:
- SQJA78EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR40.52
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 23 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 745 | MYR8.104 | MYR40.52 |
| 750 - 1495 | MYR7.698 | MYR38.49 |
| 1500 + | MYR7.316 | MYR36.58 |
*price indicative
- RS Stock No.:
- 188-5157
- Mfr. Part No.:
- SQJA78EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | SQJA78EP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.47 mm | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series SQJA78EP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.47 mm | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
Automotive N-Channel 80 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
Related links
- Vishay SQJA78EP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184ER-T1_GE3
- Vishay SQJQ184ER Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK (8x8LR)
- Vishay SQS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- Infineon ISZ Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ056N03LF2SATMA1