Vishay SiSS60DN N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3
- RS Stock No.:
- 188-5094
- Distrelec Article No.:
- 304-32-536
- Mfr. Part No.:
- SISS60DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 pack of 10 units)*
MYR59.34
FREE delivery for orders over RM 150.00
- Shipping from 15 November 2027
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 740 | MYR5.934 | MYR59.34 |
| 750 - 1490 | MYR5.638 | MYR56.38 |
| 1500 + | MYR5.356 | MYR53.56 |
*price indicative
- RS Stock No.:
- 188-5094
- Distrelec Article No.:
- 304-32-536
- Mfr. Part No.:
- SISS60DN-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 181.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SiSS60DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.01mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.8W | |
| Forward Voltage Vf | 680mV | |
| Maximum Gate Source Voltage Vgs | -12V, +16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Height | 780μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 181.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SiSS60DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.01mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.8W | ||
Forward Voltage Vf 680mV | ||
Maximum Gate Source Voltage Vgs -12V, +16V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Height 780μm | ||
Automotive Standard No | ||
Related links
- Vishay SiSS60DN N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISS60DN-T1-GE3
- Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSHA10DN N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3
- Vishay SiSS76LDN N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiSS76LDN-T1-GE3
- Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SiSS30ADN N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SiSS30ADN-T1-GE3
- Vishay SiSS30LDN N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SISS30LDN-T1-GE3
- Vishay SiS126DN N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212 SIS126DN-T1-GE3
