Vishay SiS126DN Type N-Channel MOSFET, 45.1 A, 80 V Enhancement, 8-Pin PowerPAK 1212
- RS Stock No.:
- 188-4886
- Mfr. Part No.:
- SIS126DN-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR9,453.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 19 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR3.151 | MYR9,453.00 |
| 6000 - 9000 | MYR3.082 | MYR9,246.00 |
| 12000 + | MYR3.025 | MYR9,075.00 |
*price indicative
- RS Stock No.:
- 188-4886
- Mfr. Part No.:
- SIS126DN-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45.1A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK 1212 | |
| Series | SiS126DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 21.1nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.15 mm | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45.1A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK 1212 | ||
Series SiS126DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 21.1nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.15 mm | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Automotive Standard No | ||
N-Channel 80 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
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