onsemi Dual 2 Type N-Channel Small Signal, 540 mA, 20 V Enhancement, 6-Pin SOT-563
- RS Stock No.:
- 184-1071
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
MYR1,664.00
FREE delivery for orders over RM 500.00
In Stock
- Plus 4,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | MYR0.416 | MYR1,664.00 |
| 8000 - 12000 | MYR0.409 | MYR1,636.00 |
| 16000 + | MYR0.401 | MYR1,604.00 |
*price indicative
- RS Stock No.:
- 184-1071
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 7 V | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 7 V | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Length 1.7mm | ||
Height 0.6mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This is a 20 V N-Channel Power MOSFET.
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Related links
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