Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT
- RS Stock No.:
- 180-7328
- Mfr. Part No.:
- SI8802DB-T2-E1
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR2,682.00
FREE delivery for orders over RM 500.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.894 | MYR2,682.00 |
| 6000 - 9000 | MYR0.874 | MYR2,622.00 |
| 12000 + | MYR0.858 | MYR2,574.00 |
*price indicative
- RS Stock No.:
- 180-7328
- Mfr. Part No.:
- SI8802DB-T2-E1
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Series | TrenchFET | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 0.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.8 mm | |
| Standards/Approvals | No | |
| Length | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 8V | ||
Series TrenchFET | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 0.6W | ||
Maximum Operating Temperature 150°C | ||
Width 0.8 mm | ||
Standards/Approvals No | ||
Length 0.8mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop.
Low on-resistance
Halogen free
Pb free
Related links
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT