Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON
- RS Stock No.:
- 178-7484
- Mfr. Part No.:
- BSC039N06NSATMA1
- Manufacturer:
- Infineon
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MYR14,500.00
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- 10,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | MYR2.90 | MYR14,500.00 |
| 10000 - 15000 | MYR2.836 | MYR14,180.00 |
| 20000 + | MYR2.784 | MYR13,920.00 |
*price indicative
- RS Stock No.:
- 178-7484
- Mfr. Part No.:
- BSC039N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC039N06NSATMA1
This MOSFET is a compact N-channel switching device designed for high-current power applications, offering robust operation across a wide temperature range. It is intended for surface‑mount assembly and delivers efficient conduction and switching performance for demanding electronic systems.
Features and Benefits:
• Very low on-resistance 5.9 mΩ enabling reduced conduction losses
• High continuous drain current 100A supporting heavy load handling
• 60V drain-source rating for robust voltage headroom
• Low gate charge 27 nC allowing faster switching and lower drive energy
• Maximum power dissipation 69W permitting sustained thermal loading
• High continuous drain current 100A supporting heavy load handling
• 60V drain-source rating for robust voltage headroom
• Low gate charge 27 nC allowing faster switching and lower drive energy
• Maximum power dissipation 69W permitting sustained thermal loading
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for motor‑drive stages requiring high continuous current
• Used with DC-DC converters in telecommunications equipment
• Can be used for server and datacentre power distribution modules
• Suitable for industrial switching and power‑management assemblies
• Ideal for motor‑drive stages requiring high continuous current
• Used with DC-DC converters in telecommunications equipment
• Can be used for server and datacentre power distribution modules
• Suitable for industrial switching and power‑management assemblies
What thermal extremes can the device tolerate in operation?
It is specified to function from -55 °C up to 150 °C enabling use in harsh thermal environments.
What package and mounting method does it require for board assembly?
The component is supplied in an 8‑pin TDSON package designed for surface‑mount placement and solder reflow processes.
What is the channel mode and how does it affect switching?
It uses an enhancement‑mode N‑channel configuration which requires a positive gate‑source drive to conduct and offers conventional low‑side and high‑side switching topology compatibility.
What gate‑drive voltage limit must be observed during design?
The maximum permissible gate‑to‑source voltage is 20V and designs should keep gate excursions within this threshold to avoid damage.
Related links
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