Vishay Siliconix TrenchFET Type P-Channel MOSFET, 9.4 A, 200 V Enhancement, 8-Pin SO-8 SQJ431AEP-T1_GE3
- RS Stock No.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR67.55
FREE delivery for orders over RM 500.00
Last RS stock
- Final 10,290 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 740 | MYR6.755 | MYR67.55 |
| 750 - 1490 | MYR6.418 | MYR64.18 |
| 1500 + | MYR6.098 | MYR60.98 |
*price indicative
- RS Stock No.:
- 178-3873
- Mfr. Part No.:
- SQJ431AEP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 760mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5 mm | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 760mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Width 5 mm | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
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