P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ481EP-T1_GE3
- RS Stock No.:
- 178-3719
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Subtotal (1 reel of 3000 units)**
MYR6,927.00
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | MYR2.309 | MYR6,927.00 |
| 6000 - 9000 | MYR2.258 | MYR6,774.00 |
| 12000 + | MYR2.216 | MYR6,648.00 |
**price indicative
- RS Stock No.:
- 178-3719
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Width | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 5.99mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.07mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Width 5mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Transistor Material Si | ||
Length 5.99mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
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