ROHM N-Channel MOSFET, 5 A, 800 V, 3-Pin TO-220FM R8005ANX
- RS Stock No.:
- 172-0491
- Mfr. Part No.:
- R8005ANX
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR77.91
FREE delivery for orders over RM 500.00
Last RS stock
- Final 310 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | MYR7.791 | MYR77.91 |
| 50 - 90 | MYR7.401 | MYR74.01 |
| 100 - 190 | MYR7.031 | MYR70.31 |
| 200 - 390 | MYR6.68 | MYR66.80 |
| 400 + | MYR6.346 | MYR63.46 |
*price indicative
- RS Stock No.:
- 172-0491
- Mfr. Part No.:
- R8005ANX
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220FM | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.69 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 51 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.8mm | |
| Height | 15.4mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220FM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.69 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 51 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.8mm | ||
Height 15.4mm | ||
Forward Diode Voltage 1.5V | ||
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
10Ｖ-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free
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