Toshiba Type N-Channel MOSFET, 93 A, 100 V Enhancement, 8-Pin SOP
- RS Stock No.:
- 171-2202
- Mfr. Part No.:
- TPH4R50ANH
- Manufacturer:
- Toshiba
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-2202
- Mfr. Part No.:
- TPH4R50ANH
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 5 mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 22 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
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