N-Channel MOSFET, 2 A, 800 V, 3-Pin TO-220FP STMicroelectronics STF2N80K5
- RS Stock No.:
- 168-8656
- Mfr. Part No.:
- STF2N80K5
- Manufacturer:
- STMicroelectronics
Subtotal (1 tube of 50 units)**
MYR230.20
50 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
|---|---|---|
| 50 + | MYR4.604 | MYR230.20 |
**price indicative
- RS Stock No.:
- 168-8656
- Mfr. Part No.:
- STF2N80K5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | MDmesh K5, SuperMESH5 | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 20 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
| Width | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Height | 16.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 800 V | ||
Series MDmesh K5, SuperMESH5 | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +30 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Width 4.6mm | ||
Number of Elements per Chip 1 | ||
Height 16.4mm | ||
Minimum Operating Temperature -55 °C | ||
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