N-Channel MOSFET, 42 A, 710 V, 3-Pin TO-247 STMicroelectronics STW57N65M5
- RS Stock No.:
- 168-7623
- Mfr. Part No.:
- STW57N65M5
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)**
MYR1,591.44
Temporarily out of stock - back order for despatch 19/03/2026, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Tube** |
---|---|---|
30 - 30 | MYR53.048 | MYR1,591.44 |
60 - 90 | MYR51.881 | MYR1,556.43 |
120 + | MYR50.926 | MYR1,527.78 |
**price indicative
- RS Stock No.:
- 168-7623
- Mfr. Part No.:
- STW57N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 42 A | |
Maximum Drain Source Voltage | 710 V | |
Package Type | TO-247 | |
Series | MDmesh M5 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 63 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 250 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Number of Elements per Chip | 1 | |
Width | 5.15mm | |
Length | 15.75mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 98 nC @ 10 V | |
Height | 20.15mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 42 A | ||
Maximum Drain Source Voltage 710 V | ||
Package Type TO-247 | ||
Series MDmesh M5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 63 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Width 5.15mm | ||
Length 15.75mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 98 nC @ 10 V | ||
Height 20.15mm | ||
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