N-Channel MOSFET, 400 mA, 600 V, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP

RS Stock No.:: 168-6849
Mfr. Part No.:: STQ1HNK60R-AP
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 400 mA, 600 V, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP

This image is representative of the product range

Price Each (On a Tape of 2000)

MYR1.147

6960 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per Unit	Per Tape**
2000 +	MYR1.147	MYR2,294.00

**price indicative

RS Stock No.:: 168-6849
Mfr. Part No.:: STQ1HNK60R-AP
Manufacturer:: STMicroelectronics

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	400 mA
Maximum Drain Source Voltage	600 V
Series	MDmesh, SuperMESH
Package Type	TO-92
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	8.5 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.25V
Maximum Power Dissipation	3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	3.94mm
Transistor Material	Si
Length	4.95mm
Typical Gate Charge @ Vgs	7 nC @ 10 V
Height	4.95mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 400 mA, 600 V, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

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