N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXYS IXTK120N65X2
- RS Stock No.:
- 168-4816
- Mfr. Part No.:
- IXTK120N65X2
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 25/10/2024, delivery within 4 working days from despatch date
Price Each (In a Tube of 25)
MYR102.106
Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | MYR102.106 | MYR2,552.65 |
| 50 - 75 | MYR99.86 | MYR2,496.50 |
| 100 + | MYR98.022 | MYR2,450.55 |
*price indicative
- RS Stock No.:
- 168-4816
- Mfr. Part No.:
- IXTK120N65X2
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 650 V |
| Series | X2-Class |
| Package Type | TO-264P |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 23 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 1.25 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 230 nC @ 10 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 20.3mm |
| Maximum Operating Temperature | +150 °C |
| Width | 26.3mm |
| Height | 5.3mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.4V |