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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	33 A
	Maximum Drain Source Voltage	250 V
	Series	UniFET
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	94 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	235 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	36.8 nC @ 10 V
	Length	10.67mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Width	11.33mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	4.83mm

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 33 A
	Maximum Drain Source Voltage 250 V
	Series UniFET
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 94 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 235 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 36.8 nC @ 10 V
	Length 10.67mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Width 11.33mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 4.83mm

onsemi UniFET N-Channel MOSFET, 33 A, 250 V, 3-Pin D2PAK FDB33N25TM

FREE delivery for orders over MYR500.00

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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