Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Units	Per Unit	Per Reel**
3000 - 3000	MYR1.087	MYR3,261.00
6000 - 9000	MYR1.063	MYR3,189.00
12000 +	MYR1.043	MYR3,129.00

Select all	Attribute	Value
	Manufacturer	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	280 mA
	Maximum Drain Source Voltage	60 V
	Package Type	SOT-563
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	13.5 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	250 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Length	1.7mm
	Number of Elements per Chip	2
	Maximum Operating Temperature	+150 °C
	Width	1.2mm
	Height	0.6mm
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer onsemi
	Channel Type N
	Maximum Continuous Drain Current 280 mA
	Maximum Drain Source Voltage 60 V
	Package Type SOT-563
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 13.5 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 250 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Length 1.7mm
	Number of Elements per Chip 2
	Maximum Operating Temperature +150 °C
	Width 1.2mm
	Height 0.6mm
	Minimum Operating Temperature -55 °C

Dual N-Channel MOSFET, 280 mA, 60 V, 6-Pin SOT-563 onsemi 2N7002V

FREE delivery for orders over MYR700.00

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

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