DiodesZetex DMG Type N-Channel MOSFET, 7.5 A, 30 V Enhancement, 6-Pin TSOT
- RS Stock No.:
- 165-8744
- Mfr. Part No.:
- DMG6402LVT-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
MYR1,368.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 21 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR0.456 | MYR1,368.00 |
| 6000 - 9000 | MYR0.446 | MYR1,338.00 |
| 12000 + | MYR0.438 | MYR1,314.00 |
*price indicative
- RS Stock No.:
- 165-8744
- Mfr. Part No.:
- DMG6402LVT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMG | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.4nC | |
| Maximum Power Dissipation Pd | 1.75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMG | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.4nC | ||
Maximum Power Dissipation Pd 1.75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.9mm | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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