Vishay SiHF640L Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-262

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Subtotal (1 tube of 50 units)*

MYR340.50

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Units
Per Unit
Per Tube*
50 - 450MYR6.81MYR340.50
500 +MYR6.606MYR330.30

*price indicative

RS Stock No.:
165-6089
Mfr. Part No.:
SIHF640L-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-262

Series

SiHF640L

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2V

Maximum Power Dissipation Pd

130W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Height

11.3mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


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