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    N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

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    Subtotal (1 reel of 5000 units)**

    MYR5,985.00

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    20000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per Unit
    Per Reel**
    5000 +MYR1.197MYR5,985.00

    **price indicative

    RS Stock No.:
    165-5979
    Mfr. Part No.:
    BSZ060NE2LSATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    40 A

    Maximum Drain Source Voltage

    25 V

    Package Type

    TSDSON

    Series

    OptiMOS™

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    8.1 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2V

    Minimum Gate Threshold Voltage

    1.2V

    Maximum Power Dissipation

    26 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    3.4mm

    Transistor Material

    Si

    Width

    3.4mm

    Number of Elements per Chip

    1

    Maximum Operating Temperature

    +150 °C

    Typical Gate Charge @ Vgs

    9.1 nC @ 10 V

    Minimum Operating Temperature

    -55 °C

    Height

    1.1mm

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