Essential and Operational Technologies

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Units	Per Unit	Per Reel**
3000 - 3000	MYR0.314	MYR942.00
6000 - 9000	MYR0.307	MYR921.00
12000 +	MYR0.301	MYR903.00

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	190 mA
	Maximum Drain Source Voltage	100 V
	Package Type	SOT-23
	Series	OptiMOS™
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	10 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.8V
	Minimum Gate Threshold Voltage	0.8V
	Maximum Power Dissipation	500 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	0.6 nC @ 10 V
	Length	2.9mm
	Width	1.3mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 190 mA
	Maximum Drain Source Voltage 100 V
	Package Type SOT-23
	Series OptiMOS™
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 10 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.8V
	Minimum Gate Threshold Voltage 0.8V
	Maximum Power Dissipation 500 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 0.6 nC @ 10 V
	Length 2.9mm
	Width 1.3mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 1mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

FREE delivery for orders over MYR500.00

Infineon OptiMOS™ Small Signal MOSFETs

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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