N-Channel MOSFET, 8.2 A, 30 V, 6-Pin TSOP-6 Infineon IRFTS8342TRPBF
- RS Stock No.:
- 165-5807
- Mfr. Part No.:
- IRFTS8342TRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)**
MYR2,100.00
3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 3000 - 3000 | MYR0.70 | MYR2,100.00 |
| 6000 - 9000 | MYR0.685 | MYR2,055.00 |
| 12000 + | MYR0.672 | MYR2,016.00 |
**price indicative
- RS Stock No.:
- 165-5807
- Mfr. Part No.:
- IRFTS8342TRPBF
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TSOP-6 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 29 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.75mm | |
| Number of Elements per Chip | 1 | |
| Length | 3mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 4.8 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.3mm | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TSOP-6 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.75mm | ||
Number of Elements per Chip 1 | ||
Length 3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.8 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.3mm | ||
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