N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 onsemi NTF3055-100T1G
- RS Stock No.:
- 163-2300
- Mfr. Part No.:
- NTF3055-100T1G
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 reel of 1000 units)**
MYR2,125.00
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over MYR700.00
Units | Per Unit | Per Reel** |
|---|---|---|
| 1000 - 1000 | MYR2.125 | MYR2,125.00 |
| 2000 - 3000 | MYR2.078 | MYR2,078.00 |
| 4000 + | MYR2.04 | MYR2,040.00 |
**price indicative
- RS Stock No.:
- 163-2300
- Mfr. Part No.:
- NTF3055-100T1G
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 3.7mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V dc | |
| Transistor Material | Si | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 3.7mm | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V dc | ||
Transistor Material Si | ||
Length 6.7mm | ||
Height 1.65mm | ||
Minimum Operating Temperature -55 °C | ||