Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET, 260 mA, 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Manufacturer:
- Nexperia
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 153-1880
- Mfr. Part No.:
- NX7002BKXBZ
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 4032mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Dual | |
| Height | 360μm | |
| Length | 1.15mm | |
| Standards/Approvals | No | |
| Width | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 4032mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Dual | ||
Height 360μm | ||
Length 1.15mm | ||
Standards/Approvals No | ||
Width 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Related links
- Nexperia Dual Trench MOSFET 2 N-Channel Trench MOSFET 60 V Enhancement, 8-Pin DFN NX7002BKXBZ
- Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ
- Nexperia Isolated Trench MOSFET 2 N-Channel MOSFET 60 V Enhancement115
- Nexperia Isolated Trench MOSFET 2 N-Channel MOSFET 60 V Enhancement115
- Nexperia Dual NX3020NAKS 2 N-Channel Trench MOSFET 30 V Enhancement115
- onsemi NTR5103N N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 NTR5103NT1G
- Nexperia Dual NX3008CBKS 2 Type P 350 mA 6-Pin SC-88 NX3008CBKS,115
- Nexperia Isolated Trench MOSFET 2 N-Channel MOSFET 30 V Enhancement115