Nexperia N-Channel MOSFET, 5.5 A, 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR
- RS Stock No.:
- 151-3122
- Mfr. Part No.:
- PMV25ENEAR
- Manufacturer:
- Nexperia
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 151-3122
- Mfr. Part No.:
- PMV25ENEAR
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.94W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.94W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175°C rating
30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Related links
- Nexperia N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR
- Nexperia N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 PMV20XNEAR
- Nexperia N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 NX7002BKR
- Nexperia N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 PMV280ENEAR
- Nexperia N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 PMV28UNEAR
- Nexperia N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV100ENEAR
- Nexperia N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 PMV230ENEAR
- Nexperia N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV50ENEAR
