SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11

RS Stock No.:: 150-1488
Mfr. Part No.:: SCT3120ALGC11
Manufacturer:: ROHM

SiC N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247N ROHM SCT3120ALGC11

41 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Price Each

MYR40.07

Units	Per Unit
1 - 1	MYR40.07
2 - 4	MYR39.27
5 - 9	MYR38.49
10 - 49	MYR37.72
50 +	MYR36.96

RS Stock No.:: 150-1488
Mfr. Part No.:: SCT3120ALGC11
Manufacturer:: ROHM

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Voltage	650 V
Package Type	TO-247N
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	158.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.6V
Minimum Gate Threshold Voltage	2.7V
Maximum Power Dissipation	103 W
Transistor Configuration	Single
Maximum Gate Source Voltage	22 V
Transistor Material	SiC
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	38 nC @ 18 V
Length	16mm
Width	5mm
Number of Elements per Chip	1
Height	21mm