DiodesZetex Dual DMT 2 Type N-Channel MOSFET, 7.6 A, 60 V Enhancement, 8-Pin SOIC DMTH6016LSD-13
- RS Stock No.:
- 146-4775
- Mfr. Part No.:
- DMTH6016LSD-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR32.68
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 2,120 unit(s) shipping from 23 March 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 620 | MYR3.268 | MYR32.68 |
| 630 - 1240 | MYR3.105 | MYR31.05 |
| 1250 + | MYR2.949 | MYR29.49 |
*price indicative
- RS Stock No.:
- 146-4775
- Mfr. Part No.:
- DMTH6016LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Width | 3.95 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.4W | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Width 3.95 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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