DiodesZetex DMP Type P-Channel MOSFET, 90 A, 30 V Enhancement, 8-Pin DI5060 DMP3007SPS-13
- RS Stock No.:
- 146-4755
- Mfr. Part No.:
- DMP3007SPS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
MYR33.91
FREE delivery for orders over RM 500.00
In Stock
- 24,960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 620 | MYR3.391 | MYR33.91 |
| 630 - 1240 | MYR3.221 | MYR32.21 |
| 1250 + | MYR3.06 | MYR30.60 |
*price indicative
- RS Stock No.:
- 146-4755
- Mfr. Part No.:
- DMP3007SPS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMP | |
| Package Type | DI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 64.2nC | |
| Maximum Power Dissipation Pd | 2.7W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMP | ||
Package Type DI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 64.2nC | ||
Maximum Power Dissipation Pd 2.7W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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