Infineon HEXFET N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-263 IRLZ34NSTRLPBF
- RS Stock No.:
- 145-8936
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Manufacturer:
- Infineon
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MYR2,537.60
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Units | Per Unit | Per Reel* |
|---|---|---|
| 800 - 800 | MYR3.172 | MYR2,537.60 |
| 1600 - 2400 | MYR3.102 | MYR2,481.60 |
| 3200 + | MYR3.045 | MYR2,436.00 |
*price indicative
- RS Stock No.:
- 145-8936
- Mfr. Part No.:
- IRLZ34NSTRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 11.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 11.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NSTRLPBF
This high-performance N-channel MOSFET facilitates efficient switching and amplification in various electrical applications. With a continuous drain current capacity of 30A and a maximum drain-source voltage of 55V, it suits automotive, industrial, and consumer electronics applications. Its surface mount design simplifies integration into modern circuit boards, making it a key component for effective power management.
Features & Benefits
• Low gate threshold voltage for enhanced switching speed
• Low RDS(on) for efficient power dissipation
• High thermal resistance allows operation at elevated temperatures
• Maximum power dissipation of 68 W contributes to durability
• Surface mount technology supports Compact designs
• Efficient drive with capable high gate charge at 5V
Applications
• Power supply circuits for effective voltage regulation
• Motor control requiring swift switching
• DC-DC converters for improved efficiency
• Precision instrumentation for dependable performance
• Automotive with high reliability demands
What is the maximum continuous current this component can handle?
The device can handle a maximum continuous drain current of 30A.
How does this MOSFET manage thermal performance?
It operates at a maximum temperature of +175 °C, ensuring reliability in high-temperature environments.
Can it be used in automotive applications?
Yes, its robust construction and high-temperature tolerance make it suitable for various automotive circuits.
What type of circuit configurations can it support?
The MOSFET supports enhancement mode transistor configurations, Ideal for switching applications.
Is it compatible with surface mount circuit designs?
Yes, the D2PAK (TO-263) package type allows easy integration into surface mount applications and facilitates simple placement on circuit boards.
Related links
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