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    N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3

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    Subtotal (1 pack of 2 units)**

    MYR23.33

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    2 +MYR11.665MYR23.33

    **price indicative

    Packaging Options:
    RS Stock No.:
    134-9727
    Mfr. Part No.:
    SIR680DP-T1-RE3
    Manufacturer:
    Vishay
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    Manufacturer

    Vishay

    Channel Type

    N

    Maximum Continuous Drain Current

    100 A

    Maximum Drain Source Voltage

    80 V

    Package Type

    PowerPAK SO-8

    Series

    TrenchFET

    Mounting Type

    Surface Mount

    Pin Count

    8

    Maximum Drain Source Resistance

    3.4 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    3.4V

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    104 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Width

    5.26mm

    Length

    6.25mm

    Typical Gate Charge @ Vgs

    69.5 nC @ 10 V

    Height

    1.12mm

    Forward Diode Voltage

    1.1V

    Minimum Operating Temperature

    -55 °C

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