N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK Infineon IRFS7730TRLPBF

RS Stock No.:: 130-1007
Mfr. Part No.:: IRFS7730TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 246 A, 75 V, 3-Pin D2PAK Infineon IRFS7730TRLPBF

This image is representative of the product range

298 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each (In a Pack of 2)

MYR15.325

Units	Per Unit	Per Pack*
2 +	MYR15.325	MYR30.65
*price indicative

RS Stock No.:: 130-1007
Mfr. Part No.:: IRFS7730TRLPBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	246 A
Maximum Drain Source Voltage	75 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	2.6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	375 W
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	271 nC @ 10 V
Number of Elements per Chip	1
Width	9.65mm
Height	4.83mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V