ROHM RZF013P01 Type P-Channel MOSFET, 1.3 A, 12 V Enhancement, 3-Pin SOT-323 RZF013P01TL
- RS Stock No.:
- 124-6844
- Mfr. Part No.:
- RZF013P01TL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR38.95
FREE delivery for orders over RM 500.00
In Stock
- 50 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 100 | MYR1.558 | MYR38.95 |
| 125 - 225 | MYR1.402 | MYR35.05 |
| 250 - 600 | MYR1.275 | MYR31.88 |
| 625 - 1225 | MYR1.168 | MYR29.20 |
| 1250 + | MYR1.077 | MYR26.93 |
*price indicative
- RS Stock No.:
- 124-6844
- Mfr. Part No.:
- RZF013P01TL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | RZF013P01 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.06Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.82mm | |
| Standards/Approvals | No | |
| Width | 1.8 mm | |
| Length | 2.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series RZF013P01 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.06Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.82mm | ||
Standards/Approvals No | ||
Width 1.8 mm | ||
Length 2.1mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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