STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-220 STF35N60DM2
- RS Stock No.:
- 111-6464
- Mfr. Part No.:
- STF35N60DM2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
MYR34.86
FREE delivery for orders over RM 500.00
In Stock
- Plus 234 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 12 | MYR17.43 | MYR34.86 |
| 14 - 24 | MYR16.90 | MYR33.80 |
| 26 + | MYR16.40 | MYR32.80 |
*price indicative
- RS Stock No.:
- 111-6464
- Mfr. Part No.:
- STF35N60DM2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh DM2 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Width | 4.6 mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh DM2 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Width 4.6 mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW35N60DM2
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh DM2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW48N60DM2