Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- RS Stock No.:
- 110-9115
- Mfr. Part No.:
- BSC097N06NSATMA1
- Manufacturer:
- Infineon
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MYR97.275
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 1225 | MYR3.891 | MYR97.28 |
| 1250 - 2475 | MYR3.697 | MYR92.43 |
| 2500 + | MYR3.512 | MYR87.80 |
*price indicative
- RS Stock No.:
- 110-9115
- Mfr. Part No.:
- BSC097N06NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 36W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 36W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
RoHS Status: Not Applicable
Infineon OptiMOS Series MOSFET, 60V Drain Source Voltage, 46A Continuous Drain Current - BSC097N06NSATMA1
This MOSFET is a power transistor designed for switching and amplification in high-current, low-voltage circuits. It operates across an extended temperature span and is supplied in a compact surface-mount package suitable for dense board layouts. The device is intended for demanding electronic assemblies where efficient conduction and gate control are required.
Features and Benefits:
• Maximum drain-source voltage 60V enables robust low-voltage switching
• Continuous drain current 46A supports high-current load handling
• Low RDS(on) 14.6 mΩ reduces conduction losses in power paths
• Maximum power dissipation 36W allows sustained thermal loading
• Typical gate charge 12 nC provides swift gate transitions
• Gate-source tolerance 20V permits flexible drive voltages
• Continuous drain current 46A supports high-current load handling
• Low RDS(on) 14.6 mΩ reduces conduction losses in power paths
• Maximum power dissipation 36W allows sustained thermal loading
• Typical gate charge 12 nC provides swift gate transitions
• Gate-source tolerance 20V permits flexible drive voltages
Applications
• Suitable for synchronous buck regulator stages
• Ideal for motor-drive half-bridge circuits
• Used with DC-DC converters in server power supplies
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load switching
• Ideal for motor-drive half-bridge circuits
• Used with DC-DC converters in server power supplies
• Can be used for battery management and power distribution
• Appropriate for high-current point-of-load switching
What thermal environment can it withstand during operation?
It is rated to operate between -55 °C and 150 °C, permitting use across industrial and elevated-temperature applications.
What package and mounting method are provided for PCB assembly?
The component is supplied in a TDSON package and is designed for surface mounting to facilitate automated assembly.
What channel type and mode are implemented for switching behaviour?
The device uses an N-channel enhancement-mode topology suitable for low-side and high-side switching when appropriately driven.
How many electrical connections does the device present to a circuit?
It features an 8‑pin configuration to accommodate gate, drain and source connections and thermal conduction paths.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V N, 8-Pin TSDSON BSZ099N06LS5ATMA1
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