Microchip MSCSMC N-Channel MOSFET Modules, 236 A, 1200 V Enhancement Mode, 33-Pin Module MSCSMC120AM04TBZ2EG
- RS Stock No.:
- 931-017
- Mfr. Part No.:
- MSCSMC120AM04TBZ2EG
- Manufacturer:
- Microchip
N
Subtotal (1 unit)*
MYR637.22
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Units | Per Unit |
|---|---|
| 1 + | MYR637.22 |
*price indicative
- RS Stock No.:
- 931-017
- Mfr. Part No.:
- MSCSMC120AM04TBZ2EG
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Modules | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 236A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Module | |
| Series | MSCSMC | |
| Mount Type | Direct | |
| Pin Count | 33 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 726nC | |
| Maximum Power Dissipation Pd | 604W | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 62.8mm | |
| Length | 56.7mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Modules | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 236A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Module | ||
Series MSCSMC | ||
Mount Type Direct | ||
Pin Count 33 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 726nC | ||
Maximum Power Dissipation Pd 604W | ||
Maximum Gate Source Voltage Vgs 21V | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 62.8mm | ||
Length 56.7mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.
SiC technology ensures low switching and conduction losses
Integrated thermistor facilitates effective temperature monitoring
Low thermal resistance allows efficient heat dissipation
Ultra low weight and profile contribute to design flexibility