STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET, 126 A, 80 V N, 8-Pin PowerFLAT STL110N8F8

N

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

MYR6.34

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per Unit
1 - 24MYR6.34
25 - 99MYR5.61
100 - 499MYR5.04
500 - 999MYR4.31
1000 +MYR3.58

*price indicative

RS Stock No.:
898-599
Mfr. Part No.:
STL110N8F8
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerFLAT

Series

STL

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Transistor Configuration

Enhancement Mode

Maximum Operating Temperature

175°C

Width

5mm

Standards/Approvals

ECOPACK2

Length

5.8mm

Height

1mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.

MSL1 grade

100% avalanche tested

Low gate charge

Related links