STMicroelectronics STWA60N0 N-Channel Power MOSFET, 62 A, 600 V N, 3-Pin TO-247 STWA60N035M9
- RS Stock No.:
- 762-554
- Mfr. Part No.:
- STWA60N035M9
- Manufacturer:
- STMicroelectronics
Get a bulk buy discount
Add 10 more to save MYR11.00
View bulk pricing optionsSubtotal (1 unit)*
MYR37.53
FREE delivery for orders over RM 150.00
In Stock
- 145 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Saving |
|---|---|---|
| 1 - 9 | MYR37.53 | - |
| 10 - 49 | MYR36.43 | MYR11.00 |
| 50 - 99 | MYR35.31 | MYR111.00 |
| 100 + | MYR30.38 | MYR715.00 |
*price indicative
- RS Stock No.:
- 762-554
- Mfr. Part No.:
- STWA60N035M9
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | STWA60N0 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 321W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 21.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.1mm | |
| Width | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series STWA60N0 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 321W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 21.1mm | ||
Standards/Approvals RoHS Compliant | ||
Height 5.1mm | ||
Width 15.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N Channel Super Junction Power MOSFET is a high efficiency power device built on Advanced MDmesh M9 super junction technology. It is designed for medium to high voltage applications where low conduction losses and fast switching are critical.
Very low FOM
Higher dv/dt capability
Excellent switching performance
100% avalanche tested
Related links
- STMicroelectronics ST N-Channel MOSFET 600 V Depletion, 4-Pin TO-247
- STMicroelectronics ST N-Channel MOSFET 600 V Depletion, 4-Pin TO-247 STW70N60DM6-4
- Toshiba TK N-Channel MOSFET 600 V EnhancementS1VF(S
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R011M2HXKSA1
- Toshiba TK N-Channel MOSFET 600 V EnhancementS1VQ(O
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R015M2HXKSA1
- Infineon CoolSiC N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-247 IMW40R025M2HXKSA1
- STMicroelectronics ST8L65N0 N-Channel Power MOSFET 650 V N, 5-Pin PowerFlat HV ST8L65N050DM9